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| AOD488 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD488 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD488 is Pb-free (meets ROHS & Sony 259 specifications). AOD488L is a Green Product ordering option. AOD488 and AOD488L are electrically identical. TO-252 D-PAK Features VDS (V) = 40V (VGS = 10V) ID = 20 A RDS(ON) < 26 m (VGS = 10V) RDS(ON) < 39 m (VGS = 4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C Maximum 40 20 20 15 50 12 22 20 10 2 1.3 -55 to 175 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C Repetitive avalanche energy L=0.3mH C Power Dissipation Power Dissipation B TC=100C TA=25C TA=70C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t 10s Steady-State Steady-State RJA RJC Typ 17.4 50 4 Max 30 60 7.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD488 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=32V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=8A Forward Transconductance VDS=5V, ID=20A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 50 21.5 34 31 25 0.76 1 20 404 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 95 37 2.7 9.2 VGS=10V, VDS=20V, ID=20A 4.5 1.6 2.6 3.5 VGS=10V, VDS=20V, RL=1.0, RGEN=3 IF=20A, dI/dt=100A/s 6 13.2 3.5 22.9 18.3 4 12 500 26 41 39 2.3 Min 40 Typ 45 1 5 0.1 3 Max Units V A uA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R thJA and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175 C. G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The SOA curve provides a single pulse rating. Rev 0: Mar. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD488 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 55 50 45 40 ID (A) 35 30 25 20 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 50 45 Normalized On-Resistance 40 RDS(ON) (m) 35 30 25 20 15 10 0 5 10 15 20 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V VGS=4.5V 1.6 1.8 VGS=10V ID=20A VGS=3.5V 0 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 4.5V 4V 10V 8V 5V ID(A) 15 20 VDS=5V 10 125C 5 25C 500 150 60 1.4 VGS=4.5V ID=8A 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 100 90 80 70 RDS(ON) (m) 60 50 40 30 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C IS (A) ID=20A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 125C 25C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOD488 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 100 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10s 10.0 ID (Amps) RDS(ON) limited Power (W) 100s 0 0 5 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 10 15 40 VDS=20V ID=20A Capacitance (pF) 700 600 500 400 300 200 Coss Crss Ciss 200 160 120 80 40 0 0.0001 500 150 60 TJ(Max)=175C TA=25C DC 1.0 TJ(Max)=175C, TA=25C 0.1 0.1 1 10 1ms 10ms 100 0.001 0.01 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=7.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 14 ID(A), Peak Avalanche Current 12 10 8 6 4 2 0 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability TA=25C Power Dissipation (W) 25 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) 25 20 Current rating ID(A) 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Power (W) 50 40 30 20 10 0 0.001 0.01 0.1 1 10 500 150 60 TA=25C 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) T 0.01 Alpha & Omega Semiconductor, Ltd. |
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